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Advance Product Information
April 28, 2003
Ka Band 2W Power Amplifier
Key Features
* * * * * * * *
TGA4514-EPU
Typical Frequency Range: 31 - 35 GHz 33.5 dBm Nominal Psat @ Vd = 7V 31.5 dBm Nominal P1dB IMD3: 31dBc at Pout/tone=22dBm 19 dB Nominal Gain Bias 6 - 7 V, 1150 mA 0.25 um 2MI pHEMT Technology Chip Dimensions 4.0 x 3.2 x 0.1 mm (0.161 x 0.128 x 0.004) in
Preliminary Measured Data
30 Gain & Return Loss (dB ) 20 10 0 -10 -20 -30 28 29 30 31 32 33 34 35 36 37 38 Frequency (GHz)
Bias Conditions: Vd = 6 V, Id = 1150 mA
Primary Applications
* * * Point-to-Point Radio Military Radar Systems Ka Band Sat-Com
GAIN ORL
IRL
35 Psat @ Pin= 20dBm (dBm) 34 33 32 31 30 29 28 30
Bias Conditions: Vd = 6/7 V, Id = 1150 mA
Vd = 7 V Vd = 6 V
31
32
33 34 35 Frequency (GHz)
36
37
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
Advance Product Information
April 28, 2003
TGA4514-EPU
TABLE I MAXIMUM RATINGS 1/ SYMBOL
Vd Vg Id 1/2Ig1/2 PIN PD T CH TM TSTG 1/ 2/ 3/ 4/ 5/ Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
PARAMETER
VALUE
8V -5 TO 0 V 2.5 A 70 mA 27 dBm TBD 150 C 320 C -65 to 150 C
0 0 0
NOTES
2/ 2/ 3/ 3/ 2/ 4/ 5/ 6/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the entire MMIC. When operated at this bias condition with a base plate temperature of TBD, the median life is reduced from TBD to TBD hrs. Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET.
6/
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
2
Advance Product Information
April 28, 2003
TGA4514-EPU
TABLE II DC PROBE TESTS (Ta = 25 0C, Nominal) SYMBOL
IDSS,Q1 G M,Q1 V BVGS,Q1-Q6 V BVGD,Q1-Q6 V P,Q1-Q6
PARAMETER
Saturated Drain Current Transconductance Breakdown Voltage gate-source Breakdown Voltage gate-drain Pinch-off Voltage
MIN.
TYP.
114 150 -16 -16 -1
MAX.
UNITS
mA mS V V V
Q1- Q4 are 400 um FETs, Q5 is 3200 um FET, Q6 is 4000 um FET
TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C, Nominal)
PAR AM E TE R
Frequenc y R ange D rain Voltage, Vd D rain C urrent, Id G ate V oltage, V g Sm all S ignal G ain, S 21 Input R eturn Loss, S11 O utput R eturn Loss, S22 O utput Pow er @ 1 dB C om pression G ain, P1dB Saturated Pow er @ P in = 20 dBm , Psat IM D 3, Freq = 33 G H z, P out/T one = 22 dBm
TYPIC AL
31 - 35 6 1150 -0.5 19 -7 -10 31.5 32.5 31
UNITS
GHz V mA V dB dB dB dBm dBm dBc
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
3
Advance Product Information
April 28, 2003
Preliminary Measured Data
22
Bias Conditions: Vd = 6 V, Id = 1150 mA, Room Temp.
TGA4514-EPU
20
18 Gain (dB)
16
14
12
10 28 29 30 31 32 33 34 35 36 37 38 Fre que ncy (GHz)
Bias Conditions: Vd = 6/7 V, Id = 1150 mA, Room Temp.
35 34 Psat @ Pin = 20dBm (dBm) 33 32 31 30 29 28 30 31
Vd = 7 V
Vd = 6 V
32
33
34
35
36
37
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
4
Advance Product Information
April 28, 2003
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 1150 mA, Room Temp.
TGA4514-EPU
0 -5 -10 -15 -20 -25 -30 -35 28 29 30 31 32 33 34 35 36 37 38 Fre que ncy (GHz) 0 -5 O utput Return Loss (dB) -10 -15 -20 -25 -30 -35 28 29 30 31 32 33 34 35 36 37 38 Fre que ncy (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
Input Return Loss (dB)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5
Advance Product Information
April 28, 2003
Preliminary Measured Data
35 34 33 32 Pout (dBm) 31 30 29 28 27 26 25 30 31 32 33 Freque ncy (GHz) 34 35
Bias Conditions: Vd = 6 V, Id = 1150 mA, Room Temp.
TGA4514-EPU
Psat @ Pin=20dBm P1dB
36
35 34 33 32 Pout (dBm ) 31 30 29 28 27 26 25 31
Bias Conditions: Vd = 7 V, Id = 1150 mA, Room Temp.
Psat @ Pin=20dBm
P1dB
32
33
34 Frequency (GHz)
35
36
37
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
6
Advance Product Information
April 28, 2003
TGA4514-EPU
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 1150 mA, Freq = 33 GHz, Room Temp.
35 30 25 20 15 10 5 0 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 Pin (dBm)
1600
Pout
Pout (dBm) & Power Gain (dB)
1400 1200 Id (mA)
7
Id
1000
Gain
800 600 400 200
Bias Conditions: Vd = 6 V, Id = 1150 mA, Freq = 33 GHz, Room Temp.
60
50
40 IMD3 (dBc)
30
20
10
0 6 8 10 12 14 16 18 20 22 24 26 28 30 Pout pe r tone (dBm)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
April 28, 2003
TGA4514-EPU
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Id = 920 mA
25
20
-40 0C +25 0C +85 0C
15 Gain (dB)
10
5
0
-5 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Fre quency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
8
Advance Product Information
April 28, 2003
TGA4514-EPU
Mechanical Drawing
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
9
Advance Product Information
April 28, 2003
TGA4514-EPU
Chip Assembly Diagram
Note: Apply bias for Vd on both sides. Bias may be applied for Vg from either side.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
10
Advance Product Information
April 28, 2003
TGA4508-EPU Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
11

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